PART |
Description |
Maker |
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT2 |
RF Power LDMOS Transistors
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Freescale Semiconductor, Inc Freescale Semiconductor, In... Freescale Semiconductor...
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RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT2 |
RF Power LDMOS Transistors
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Freescale Semiconductor, Inc Freescale Semiconductor...
|
LET21008 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
AFT21S232SR3 AFT21S230SR3 |
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
ATC100B9R1CT500XT MCGPR63V477M13X26-RH ATC100B0R7B |
RF Power LDMOS Transistors RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc Freescale Semiconductor, In... Freescale Semiconductor...
|
BLA1011-300 LA1011-300 |
Avionics LDMOS transistors Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
|
BLF7G22LS-100P |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In... FREESCALE[Freescale Semiconductor, Inc] Motorola
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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